H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/336 (2006.01) H01L 21/28 (2006.01) H01L 21/3205 (2006.01) H01L 21/4763 (2006.01) H01L 21/768 (2006.01) H01L 29/423 (2006.01) H01L 29/788 (2006.01)
Patent
CA 2494527
Disclosed is a self-aligned non-volatile memory cell (200) comprising a small sidewall spacer (239) electrically coupled and being located next to a main floating gate region (212). Both the small sidewall spacer and the main floating gate region are formed on a substrate (204) and both form the floating gate of the non-volatile memory cell. Both are isolated electrically from the substrate by oxide layers (208, 232, 242) which are thinner (260; 232, 242) between the small sidewall spacer and the substrate; and is thicker (263; 208) between the main floating gate region and the substrate. The small sidewall spacer can be made small; therefore, the thin oxide layer area can also be made small to create a small pathway for electrons to tunnel into the floating gate.
L'invention concerne une cellule mémoire non volatile auto-alignée (200) comprenant un petit espaceur de paroi (239) couplé électriquement et disposé à proximité d'une région de grille flottante principale (212). Le petit espaceur de paroi et la région de grille flottante principale sont tous les deux formés sur un substrat (204) et les deux forment la grille flottante de la cellule de mémoire non volatile. Les deux sont électriquement isolés du substrat par des couches d'oxyde (208, 232, 242) plus fines (260; 232, 242) entre le petit espaceur de paroi et le substrat et plus épaisses (263; 208) entre la région de grille flottante principale et le substrat. Le petit espaceur de paroi peut être réalisé petit, et par conséquent la couche mince d'oxyde peut aussi être réalisée petite afin de créer, pour les électrons, un petit trajet les faisant passer, par effet tunnel, dans la grille flottante.
Lojek Bohumil
Renninger Alan L.
Atmel Corporation
Smart & Biggar
LandOfFree
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