Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

G - Physics

02

B

G02B 6/132 (2006.01) G02B 6/122 (2006.01) G02B 6/13 (2006.01) G02B 6/12 (2006.01)

Patent

CA 2374942

A method of fabricating a semiconductor device includes a step of growing at least one tapered epitaxial layer upon a supporting surface by chemical beam epitaxy, the plane of the taper being inclined to the supporting surface.

L'invention porte sur un procédé de fabrication d'un dispositif à semi-conducteur, qui consiste à faire croître au moins une couche épitaxiale conique sur une surface de support, par une technique d'épitaxie chimique en faisceau, le plan du cône étant incliné par rapport à la surface de support.

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