Method of fabricating a titanium dioxide rectifier

Details Method of fabricating a titanium dioxide rectifier Method of fabricating a titanium dioxide rectifier

C - Chemistry, Metallurgy

30

B

148/3.9

C30B 29/32 (2006.01) H01L 21/34 (2006.01) H01L 21/477 (2006.01) H01L 21/479 (2006.01) H01L 29/24 (2006.01)

Patent

CA 1179924

- 11 - ABSTRACT This specification discloses a method of fabricating a titanium rectifier circuit element. A titanium dioxide main body is formed with a pair of spaced faces each of which having thereon a platinum electrode. A dc voltage is applied across this structure, heating the structure to a temperature of about 750° - 850°C. In this temperature range, the titanium dioxide body is subjected to a cyclic sequence of exposures to oxidizing and reducing atmospheres. The final step includes cooling down the titanium dioxide body in the presence of a reducing atmosphere with an applied dc electric field.

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