Method of fabricating compound semiconductor device

Details Method of fabricating compound semiconductor device Method of fabricating compound semiconductor device

H - Electricity

01

L

H01L 21/306 (2006.01) H01L 21/3065 (2006.01) H01L 21/20 (2006.01) H01L 33/00 (2006.01) H01S 5/20 (2006.01) H01S 5/227 (2006.01)

Patent

CA 2358006

Disclosed is a method of fabricating a compound semiconductor device, which has an Al-based compound semiconductor layer and is suitable for producing, for example, a semiconductor laser device with a buried structure. The method comprises a first step of sequentially performing vapor growth of a plurality of compound semiconductor layers including an Al-based compound semiconductor layer formed on a semiconductor substrate by using a metalorganic chemical vapor deposition (MOCVD), thereby forming a semiconductor multilayer (epitaxial layer) having, for example, a double heterostructure; a second step of selectively etching a specific compound semiconductor layer in the semiconductor multilayer other than the Al-based compound semiconductor layer in the MOCVD using a bromine-based gas, thereby forming a mesa; and a third step of regrowing a predetermined compound semiconductor layer on the semiconductor multilayer in the MOCVD following the etching step.

Affiliated with

Also associated with

Rating

Method of fabricating compound semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating compound semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating compound semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1871099