Method of fabricating conducting oxide-silicon solar cells

Details Method of fabricating conducting oxide-silicon solar cells Method of fabricating conducting oxide-silicon solar cells

H - Electricity

01

L

345/22

H01L 31/02 (2006.01) C23C 14/24 (2006.01) H01L 21/363 (2006.01) C23C 14/22 (2006.01)

Patent

CA 1125424

ABSTRACT OF THE DISCLOSURE The angle of deposition of tin oxide or indium tin oxide on silicon is critical in forming highly efficient heterojunction solar cells.

328519

Affiliated with

Also associated with

Rating

Method of fabricating conducting oxide-silicon solar cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating conducting oxide-silicon solar cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating conducting oxide-silicon solar cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-798112