H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178, 356/59
H01L 21/22 (2006.01) H01L 21/74 (2006.01) H01L 21/762 (2006.01)
Patent
CA 1085064
ABSTRACT In an oxide isolated semiconductor structure having an epitaxial layer formed on a monocrystalline sub- strate, a buried, laterally extending, PN junction in said structure, and oxidized isolation regions extending through said epitaxial layer to said PN junction, thereby to form a plurality of electrically isolated pockets of semiconductor material, a dopant is located in those regions of the semi- conductor material directly adjacent the oxidized isolation regions. This dopant is often referred to as the field predeposition. The processes which result in the subsequent formation of insulating material to create isolated epitaxial pockets also result in the formation of a conductive buried region resulting from that portion of the field predeposi- tion between the epitaxial pockets and portions of the wall of the insulating material. If desired, a collector sink then may be formed in the epitaxial pocket without disrupting the function of the conductive buried region. Among other embodiments, the conductive buried region may function as a collector sink bypass to allow manufacture of smaller memory circuits than those heretofore available.
286028
Fairchild Camera And Instrument Corporation
Smart & Biggar
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