G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 6/42 (2006.01) H01S 3/02 (2006.01) H01S 3/063 (2006.01) H01S 3/0941 (2006.01) H01S 5/026 (2006.01) H01S 5/02 (2006.01) H01S 3/025 (1995.01) H01S 3/18 (1995.01) H01S 3/19 (1995.01)
Patent
CA 2162886
A process for fabricating a diode pumped laser is disclosed which allows the laser to be easily aligned with other components. Furthermore, the disclosed method provides a means for fabricating an entire diode pumped laser upon a single substrate, thus eliminating the complexity of positioning and alignment. Ion beam deposition is used to create many of the components, thus forming very efficient and very uniform components.
Honeywell Inc.
Smart & Biggar
LandOfFree
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