Method of fabricating integrated infrared sensitive bolometers

Details Method of fabricating integrated infrared sensitive bolometers Method of fabricating integrated infrared sensitive bolometers

H - Electricity

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L

H01L 31/036 (2006.01) G01J 5/20 (2006.01) H01L 31/0368 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2125875

2125875 9313561 PCTABS00024 A method for fabricating an integrated infrared sensitive bolometer having a polycrystalline element whereby an oxide region deposited on silicon nitride (24) covered with a first polysilicon layer (30) which is etched to provide a location (32) for a bolometer element (10). A second polysilicon layer (34) is deposited and doped to achieve a desired temperature coefficient of resistivity of 1 to 2 %/·C. The second polysilicon layer forms an IR sensitive element over the oxide region. Openings are etched in the IR sensitive element to permit an etchant to remove the oxide region resulting in the sensitive element being suspended over a cavity.

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