Method of fabricating metal-semiconductor interfaces

Details Method of fabricating metal-semiconductor interfaces Method of fabricating metal-semiconductor interfaces

H - Electricity

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H01L 21/302 (2006.01) H01L 21/263 (2006.01) H01L 21/285 (2006.01) H01L 21/318 (2006.01)

Patent

CA 1061915

IMPROVED METHOD OF FABRICATING METAL-SEMICONDUCTOR INTERFACES ABSTRACT OF THE DISCLOSURE An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transis- tors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.

273809

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