Method of fabricating metal-semiconductor interfaces

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356/155

H01L 21/302 (2006.01) H01L 21/263 (2006.01) H01L 21/285 (2006.01) H01L 21/318 (2006.01)

Patent

CA 1061915

IMPROVED METHOD OF FABRICATING METAL-SEMICONDUCTOR INTERFACES ABSTRACT OF THE DISCLOSURE An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transis- tors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.

273809

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating metal-semiconductor interfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating metal-semiconductor interfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating metal-semiconductor interfaces will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-930872

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.