C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.3
C23C 14/08 (2006.01) C23C 14/28 (2006.01) C23C 14/58 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2016028
A laser beam (2) is applied to a target (1) of an oxide superconductive material, to deposit atoms and/or molecules which are scattered from the target (1) on a first portion (4) of a substrate (3) under an atmosphere containing oxygen for a start. Then, the substrate (3) is moved to deposit atoms and/or molecules scattered from the target (10) on a second portion, which is different form the first portion (4) of the substrate (3), under the atmosphere containing oxygen. At this time, the first portion (4) is subjected to oxygen annealing. These deposition steps are repeated until an oxide superconducting film of a desired thickness is obtained.
Un faisceau laser (2) est appliqué sur une cible (1) en oxyde supraconducteur pour déposer des atomes et/ou molécules arrachés de ladite cible (1) sur une première partie (4) d'un substrat (3) sous atmosphère renfermant de l'oxygène au début. Puis, le substrat (3) est déplacé en vue du dépôt d'atomes et/ou molécules arrachés de la cible (10) sur une seconde partie du substrat (3), différente de la première partie (4), sous atmosphère renfermant de l'oxygène. € cet instant, la première partie (4) subit un recuit à l'oxygène. Ces étapes sont répétées jusqu'à obtention d'une couche d'oxyde supraconducteur d'épaisseur appropriée.
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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