Method of fabricating semiconductor components through...

Details Method of fabricating semiconductor components through... Method of fabricating semiconductor components through...

H - Electricity

01

L

H01L 21/22 (2006.01) H01L 21/225 (2006.01) H01L 21/762 (2006.01) H01L 21/8238 (2006.01)

Patent

CA 2482058

A semiconductor element such as a DMOS-transistor is fabricated in a semiconductor substrate. Wells of opposite conductivity are formed by implanting and then thermally diffusing respective well dopants into preferably spaced-apart areas in the substrate. At least one trench and active regions are formed in the substrate. The trench may be a shallow drift zone trench of a DMOS-transistor, and/or a deep isolation trench. The thermal diffusion of the well dopants includes at least one first diffusion step during a first high temperature drive before forming the trench, and at least one second diffusion step during a second high temperature drive after forming the trench. Dividing the thermal diffusion steps before and after the trench formation achieves an advantageous balance between reducing or avoiding lateral,overlapping diffusion of neighboring wells and reducing or avoiding thermally induced defects along the trench boundaries.

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