Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

H - Electricity

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L

H01L 21/469 (2006.01) H01L 21/312 (2006.01) H01L 21/314 (2006.01) H01L 21/4757 (2006.01) H01L 21/4763 (2006.01) H01L 21/3105 (2006.01) H01L 21/316 (2006.01)

Patent

CA 2268769

There is provided a method of fabricating a semiconductor device having a multi-layered structure and including an interlayer insulating film composed of carbon family material, the method including the steps of (a) depositing an insulating film on a lower wiring layer, the insulating film being composed of carbon family material, (b) annealing the insulating film in hydrogen atmosphere at a first temperature equal to or greater than a temperature at which the insulating film has been deposited, and (c) forming an upper wiring layer on the insulating film. The method suppresses gas from being discharged out of an insulating film without an increase in dielectric constant, and prevents deposited films on the insulating film from being peeled off.

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