Method of fabricating semiconductor device by bonding...

Details Method of fabricating semiconductor device by bonding... Method of fabricating semiconductor device by bonding...

H - Electricity

01

L

356/173

H01L 21/22 (2006.01)

Patent

CA 1134058

- 1 - Abstract: There is provided a method of fabricating a semi- conductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of the silicon substrate, and the substrates are bonded together with an aluminum solder so as to decrease a forward voltage drop FVD. After forming the recesses but prior to the bonding with the aluminum solder, phosphor is diffused into a region ranging from the bonding surface to a depth of 20 microns, thereby further decreasing the forward voltage drop FVD.

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