Method of fabricating semiconductor device by bonding...

Details Method of fabricating semiconductor device by bonding... Method of fabricating semiconductor device by bonding...

H - Electricity

01

L

356/172

H01L 21/28 (2006.01) H01L 21/306 (2006.01) H01L 21/60 (2006.01)

Patent

CA 1127322

ABSTRACT OF THE DISCLOSURE There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of the silicon substrate, and the substrate and electrodes and the like members are bonded together with an aluminum solder so as to decrease a forward voltage drop FVD. After forming the recesses but prior to the bonding with the aluminum solder, phosphor is diffused into a region ranging from the bonding surface to a depth of 20 microns, thereby further decreasing the forward voltage drop FVD. When cooling after the bonding, a temperature gradient is established so that temperature in the silicon substrate is higher than a temperature in the molten aluminum so that the forward voltage drop FVD can be decreased further.

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