Method of fabrication of optoelectric devices by ion...

Details Method of fabrication of optoelectric devices by ion... Method of fabrication of optoelectric devices by ion...

H - Electricity

01

S

345/51

H01S 3/02 (2006.01) H01S 3/19 (1980.01)

Patent

CA 1088193

A METHOD OF FABRICATION OF OPTOELECTRONIC DEVICES BY ION IMPLANTATION Abstract of the Disclosure At least a binary semiconductor substrate is selected from the group comprising the alloys of the elements of columns II and VI and the alloys of the elements of columns III and V of the Periodic Table of Elements and having a first type of conductivity. One face of the substrate is subjected to ion implantation with impurities which are capable of endowing the sub- strate with a second type of conductivity to a given depth. A surface layer is removed from the implanted face of the substrate to a depth which has the effect of eliminating the greater part of the defects produced by the implantation but not of eliminating the greater part of the implanted impurities. -1-

257941

Affiliated with

Also associated with

Rating

Method of fabrication of optoelectric devices by ion... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabrication of optoelectric devices by ion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabrication of optoelectric devices by ion... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1131040