Method of fabrication of semiconductor components having...

Details Method of fabrication of semiconductor components having... Method of fabrication of semiconductor components having...

H - Electricity

01

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345/17

H01L 21/22 (2006.01) H01L 31/0296 (2006.01) H01L 31/12 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1138559

Abstract of the Disclosure The top surface of a wafer of p-type ZnTe semiconductor material is subjected to double diffusion of an acceptor impurity and of a donor impurity so as to create in the ZnTe on the one hand a compensated region having high resistivity and on the other hand a surface injection region of small thickness, a metallic contact being finally formed on each face of the wafer.

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