Method of forming 3-d structures using movpe growth with...

Details Method of forming 3-d structures using movpe growth with... Method of forming 3-d structures using movpe growth with...

H - Electricity

01

L

356/177

H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 21/306 (2006.01) H01L 21/308 (2006.01) H01L 21/311 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1286802

ABSTRACT ETCHING METHOD MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching. To prevent pattern broadening by diffussion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination; Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing to substrate to 20°/o O2 + 80°/oN2 for about 3 minutes at 450°C.

593363

Affiliated with

Also associated with

Rating

Method of forming 3-d structures using movpe growth with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming 3-d structures using movpe growth with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming 3-d structures using movpe growth with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1320451