C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
C23F 1/02 (2006.01) H05K 3/06 (2006.01) H05K 3/00 (2006.01)
Patent
CA 2382916
The aim of the invention is to produce a conductor pattern on dielectric substrates. According to the inventive method a) a substrate that is coated with a metal layer is coated with a protective layer which is produced by treating the metal layer with a solution containing at least one compound which contains nitrogen; b) the protective layer is at least partially removed by means of UV radiation in the areas that do not correspond to the conductor pattern in such a way that the metal layer is uncovered, whereby said conductor pattern is to be produced and c) the uncovered metal layer is subsequently removed by etching. Extremely fine conductor patterns can be produced on dielectric substrates in a reproducible manner by means of the inventive method.
L'invention concerne un procédé permettant de former un motif conducteur sur des substrats diélectriques, selon lequel: a) on recouvre un substrat revêtu d'une couche métallique avec une couche de protection qui est formée par traitement de la couche métallique avec une solution contenant au moins un composé contenant de l'azote; b) on enlève la couche de protection, au moins partiellement, dans les zones ne correspondant pas au motif conducteur à former, par irradiation avec des U.V., de façon à mettre à nu la couche métallique; et c) on enlève par attaque la couche métallique mise à nu. Grâce à ce procédé, on peut réaliser, de façon reproductible, des motifs conducteurs extrêmement fins sur des substrats diélectriques.
Guggemos Michael
Kohnle Franz
Atotech Deutschland Gmbh
Riches Mckenzie & Herbert Llp
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