Method of forming a micro structure and an x-ray mask

G - Physics – 03 – F

Patent

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G03F 7/30 (2006.01) G03F 1/14 (2006.01) G03F 7/00 (2006.01) G03F 7/027 (2006.01) G03F 7/16 (2006.01)

Patent

CA 2118753

A method of forming a microstructure having higher aspect ratio by using a general purpose synchrotron orbital radiation apparatus is provided. A resist layer mainly including a copolymer of methylmethacrylate and methacrylic acid is formed on a substrate. Lithography by synchrotron orbital radiation is carried out on the resist layer, to form a resist pattern. By carrying out normal electroplating, electroforming or the like in accordance with the resist pattern, a microstructure having high aspect ratio is obtained.

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