G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 7/30 (2006.01) G03F 1/14 (2006.01) G03F 7/00 (2006.01) G03F 7/027 (2006.01) G03F 7/16 (2006.01)
Patent
CA 2118753
A method of forming a microstructure having higher aspect ratio by using a general purpose synchrotron orbital radiation apparatus is provided. A resist layer mainly including a copolymer of methylmethacrylate and methacrylic acid is formed on a substrate. Lithography by synchrotron orbital radiation is carried out on the resist layer, to form a resist pattern. By carrying out normal electroplating, electroforming or the like in accordance with the resist pattern, a microstructure having high aspect ratio is obtained.
Numazawa Toshiyuki
Ogino Seiji
G. Ronald Bell & Associates
New Energy And Industrial Technology Development Organization
Sumitomo Electric Industries Ltd.
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