Method of forming a negative resist pattern by exposing to...

Details Method of forming a negative resist pattern by exposing to... Method of forming a negative resist pattern by exposing to...

G - Physics

03

F

96/150, 96/266

G03F 7/038 (2006.01)

Patent

CA 1166061

Abstract of the Disclosure A method for forming a negative resist pattern which applies as a high energy beam-sensitive material a polymer consisting of components expressed by the general structural formula: Image where: X = halogen or -O-? CH = CHR2 (R2 is H or CH3) R1 = H or CH3 n = 1 to 3 m, ? = integers having a relationship of 50 ? m+? ? 50,000.

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