Method of forming a silicon dioxide film

Details Method of forming a silicon dioxide film Method of forming a silicon dioxide film

C - Chemistry, Metallurgy

01

B

C01B 33/12 (2006.01) C23C 16/24 (2006.01) C23C 16/56 (2006.01) C30B 33/00 (2006.01) G02B 6/132 (2006.01)

Patent

CA 2436001

There is provided a method of forming a silicon dioxide film, which comprises repeating a step of depositing a silicon layer on a silicon substrate to form a silicon dioxide film of a predetermined thickness, and which makes it possible to suitably select the surface roughness of the silicon dioxide film that is formed and the rate of growth of the silicon film that is deposited. According to the method of forming the silicon dioxide film that is proposed above, it comprises a step of depositing any one of polysilicon, epitaxial silicon or amorphous silicon on the silicon substrate or on the silicon dioxide film formed on the silicon substrate by the thermal oxidation treatment to form a silicon film, and a step of thermally oxidizing the silicon film to convert it into a silicon dioxide film, the step of deposition and the step of thermal oxidation being repeated a plural number of times.

L'invention concerne un procédé permettant de former une couche de dioxyde de silicium d'une épaisseur prédéterminée en répétant les étapes consistant à déposer une couche de silicium sur un substrat de silicium, et à transformer cette couche en une couche de dioxyde de silicium. Ce procédé permet une sélection adéquate de la rugosité de surface de la couche de dioxyde de silicium formée, et de la vitesse de croissance de la couche de silicium déposée. La couche de dioxyde de silicium est formée par plusieurs répétitions des étapes consistant à déposer un silicium polycristallin, un silicium épitaxial ou un silicium amorphe sur un substrat de silicium ou sur une couche de dioxyde de silicium formée par oxydation thermique sur un substrat de silicium, de manière à former une couche de silicium, et à transformer la couche en une couche de dioxyde de silicium par oxydation thermique.

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