Method of forming a single crystal material

Details Method of forming a single crystal material Method of forming a single crystal material

C - Chemistry, Metallurgy

30

B

C30B 23/04 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2061504

A method of growing an epitaxial like, single crystal, superconducting film (28) by promoting the epitaxial-like growth of film from a single nucleation site (24) in deference to substantially all other nucleation sites (29) on the substrate (14). The present invention contemplates the use of a mask (18) to systematically expose sections of the substrate (14) to the deposition apparatus. This mask (18) may include an adjustable or fixed aperture (20B) and is manipulated as herein described to systematically expose areas of the substrate (14) to the deposition plasma (12).

Cette invention concerne une méthode de croissance épitaxiale d'une pellicule supraconductrice monocristalline (28) favorisant ladite croissance épitaxiale à partir d'un seul site de germination (24) de préférence à sensiblement tous les autres sites de germination (29) du substrat (14). Cette invention fait appel à un masque (18) pour l'exposition systématique de parties du substrat (14) à l'appareil de dépôt en couche mince. Ce masque (18) peut comporter une ouverture fixe ou réglable (20B) et être manipulé de la manière indiquée ci-après pour exposer systématiquement différentes zones du substrat (14) au jet de plasma d'activation.

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