Method of forming a thin copper film by low temperature cvd

Details Method of forming a thin copper film by low temperature cvd Method of forming a thin copper film by low temperature cvd

C - Chemistry, Metallurgy

23

C

117/83

C23C 16/14 (2006.01) C23C 16/08 (2006.01) C23C 16/448 (2006.01) C23C 16/452 (2006.01) C23C 16/46 (2006.01)

Patent

CA 2027285

ABSTRACT OF THE DISCLOSURE A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

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