Method of forming a thin semiconductor film

Details Method of forming a thin semiconductor film Method of forming a thin semiconductor film

H - Electricity

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H01L 21/425 (2006.01) H01L 21/20 (2006.01) H01L 21/265 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1239706

ABSTRACT OF THE DISCLOSURE A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

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