Method of forming a thin silicon layer on an insulator

Details Method of forming a thin silicon layer on an insulator Method of forming a thin silicon layer on an insulator

C - Chemistry, Metallurgy

30

B

356/179, 148/3.2

C30B 25/20 (2006.01) C30B 33/08 (2006.01) H01L 21/302 (2006.01) H01L 21/321 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2003138

METHOD OF FORMING A THIN SILICON LAYER ON AN INSULATOR Abstract of the Invention A method of forming a thin silicon layer on an insulating layer by forming a thin layer of heteroepitaxial silicon on a first substrate other than silicon having a lattice structure which matches that of silicon. A first insulating layer is formed on the heteroepitaxial layer of silicon. A second insulating layer is formed on the surface of a second silicon substrate. The first and second insulating layers are bonded together to form a unified structure, and the first substrate is etched away, thereby obviating the etch back problems of existing techniques using homoepitaxial silicon on silicon substrates.

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