C - Chemistry – Metallurgy – 25 – D
Patent
C - Chemistry, Metallurgy
25
D
C25D 5/10 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2715891
A method of forming a superconducting article includes providing a substrate tape, forming a superconducting layer overlying the substrate tape, and depositing a capping layer overlying the superconducting layer. The capping layer includes a noble metal and has a thickness not greater than about 1.0 micron. The method further includes electrodepositing a stabilizer layer overlying the capping layer using a solution that is non-reactive to the superconducting layer. The superconducting layer has an as-formed critical current I C(AF) and a post-stabilized critical current I C(PS). The I C(PS) is at least about 95% of the I C(AF).
L'invention porte sur un procédé de formation d'un article supraconducteur qui comprend la fourniture d'une bande de substrat, la formation d'une couche supraconductrice recouvrant la bande de substrat, et le dépôt d'une couche de recouvrement recouvrant la couche supraconductrice. La couche de recouvrement comprend un métal noble et a une épaisseur non supérieure à environ 1,0 micron. Le procédé comprend en outre l'électrodéposition d'une couche de stabilisateur recouvrant la couche de recouvrement à l'aide d'une solution qui est non réactive avec la couche supraconductrice. La couche supraconductrice a un courant critique tel que formé IC(AF) et un courant critique post-stabilisé IC(PS). Le IC(PS) est d'au moins environ 95 % du IC(AF).
Bhattacharya Raghu N.
Selvamanickam Venkat
Zhang Xun
Gowling Lafleur Henderson Llp
Superpower Inc.
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