Method of forming and growing a single crystal of a...

Details Method of forming and growing a single crystal of a... Method of forming and growing a single crystal of a...

C - Chemistry, Metallurgy

30

B

148/1

C30B 25/00 (2006.01) C30B 11/06 (2006.01) C30B 11/14 (2006.01) C30B 29/44 (2006.01)

Patent

CA 1080588

A METHOD OF FORMING AND GROWING A SINGLE CRYSTAL OF A SEMICONDUCTOR COMPOUND Abstract of the Disclosure A method of forming and growing a single crystal of a semiconductor compound comprising a Group II-VI or Group III-V compound is disclosed. The method comprises placing a single crystal seed of the semiconductor compound adja- cent to a first reactant comprising a Group II or Group III element. A protective blanket, resulting from at least a second reactant of a Group VI or Group V element, is formed over the seed within a temperature zone to protect the seed from dissolution by the first reactant. The reactants are combined to form a melt at a first temperature within the temperature zone and to grow a single crystal from the melt on the seed at a second temperature within the temperature zone. The single crystal thus produced can be used, for example, as a substrate for luminescent diodes, transistors, diodes and the like.

263857

Affiliated with

Also associated with

Rating

Method of forming and growing a single crystal of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming and growing a single crystal of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming and growing a single crystal of a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-531494