Method of forming coatings containing amorphous silicon carbide

Details Method of forming coatings containing amorphous silicon carbide Method of forming coatings containing amorphous silicon carbide

C - Chemistry, Metallurgy

23

C

204/96.25

C23C 16/32 (2006.01) C23C 16/42 (2006.01) C23C 16/50 (2006.01)

Patent

CA 2013478

METHOD OF FORMING COATINGS CONTAINING AMORPHOUS SILICON CARBIDE ABSTRACT The invention is a method of forming a continuous coating of amorphous silicon carbide on the surface of articles by plasma enhanced chemical vapor deposition. In the method, the chemical vapor comprises a silicon-containing cyclobutane, such as a silacyclobutane or a 1,3-disilacyclo- butane. The coatings formed by the invention are useful for application to solar cells, for preventing corrosion of electronic devices, for forming interlevel dielectric layers between metallization layers of electronic devices and for providing abrasion resistance to surfaces.

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