Method of forming compound oxide superconducting thin film

Details Method of forming compound oxide superconducting thin film Method of forming compound oxide superconducting thin film

C - Chemistry, Metallurgy

30

B

C30B 29/22 (2006.01) H01B 12/06 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2064169

A [100] oriented ZrO2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y2O3 thin film deposited on the ZrO2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y2O3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.

Une couche mince de ZrO2 d'orientation ¢100! est formée sur certaines régions d'une surface de dépôt d'orientation ¢100! d'un substrat de silicium ; une couche mince de Y2O3 est déposée sur la couche mince de ZrO2 et sur les régions exposées de la surface de dépôt du substrat de silicium. Une couche mince supraconductrice d'oxyde composite de type Y-Ba-Cu est déposée sur la couche mince de Y2O3. La couche mince supraconductrice d'oxyde composite de type Y-Ba-Cu positionnée au-dessus de la couche mince de ZrO2 est préparée par épitaxie suivant l'orientation ¢001! et la couche mince supraconductrice d'oxyde composite de type Y-Ba-Cu est préparée par épitaxie suivant l'orientation ¢110! dans l'autre région.

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