Method of forming contacts to a semiconductor device

Details Method of forming contacts to a semiconductor device Method of forming contacts to a semiconductor device

H - Electricity

01

L

356/172

H01L 21/44 (2006.01) H01L 21/285 (2006.01) H01L 21/768 (2006.01)

Patent

CA 2011235

METHOD OF FORMING CONTACTS TO A SEMICONDUCTOR DEVICE Abstract of the Invention A method of forming semiconductor device contacts includes the steps of: providing a semiconductor substrate having at least two features thereon whereat it is desired to make electrical connections; forming a layer of etch stop material having a first etch characteristic over each of the features; forming a layer of dielectric material having a second etch characteristic over each of the features; simultaneously etching at least two vias through the layer of dielectric material using an etchant selective to the layer of dielectric material so as to substantially stop on the layer of etch stop material, the at least two vias including a via over each of the features; and extending the vias through the layer of etch stop material so as to expose the features for subsequent electrical connections.

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