Method of forming crystals

Details Method of forming crystals Method of forming crystals

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 25/02 (2006.01) C30B 25/18 (2006.01) H01L 21/20 (2006.01)

Patent

CA 1330192

ABSTRACT OF THE DISCLOSURE A method of forming crystals comprises applying crystal formation treatment according to vapor depostion to a substrate having a nonnucleation surface with smaller nucleation density and a nucleation surface of amorphous material with larger nucleation density than said nonnucleation surface and an area sufficiently small such that crystal growth may occur from only a single nucleus, the step of nucleation to form a single nucleus selectively on said nucleation surface and the step of crystal growth to permit a crystal to grow from said single nucleus being conducted under different crystal forming conditions.

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