C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/27 (2006.01) C23C 16/511 (2006.01) C23C 16/52 (2006.01)
Patent
CA 2348397
A method and an apparatus for forming a diamond film from microwave plasma by controlling a manufacturing condition based on spectroscopic measurement of plasma emission to obtain a large area of a high-quality diamond film. In the method of forming a diamond film, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave which is also introduced into the reactor to generate plasma, and the light emitted from the plasma is spectroscopically measured. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement.
Imai Takahiro
Matsuura Takashi
Meguro Kiichi
Marks & Clerk
Sumitomo Electric Industries Ltd.
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