Method of forming doped dielectric layers utilizing reactive...

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

204/96.31, 148/2

H01L 21/316 (2006.01) C23C 16/40 (2006.01) C23C 16/507 (2006.01) H01L 21/225 (2006.01) H01L 27/00 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1014830

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming doped dielectric layers utilizing reactive... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming doped dielectric layers utilizing reactive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming doped dielectric layers utilizing reactive... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-35926

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.