Method of forming ohmic contacts

Details Method of forming ohmic contacts Method of forming ohmic contacts

H - Electricity

01

L

356/174

H01L 21/44 (2006.01) H01L 21/443 (2006.01) H01L 21/465 (2006.01)

Patent

CA 1208372

ABSTRACT A method of forming ohmic contacts with thin film p-type semiconductor Class II B - VI A compounds comprising etching the film surface with an acidic solution, then etching with a strong basic solution and finally depositing a conductive metal layer.

458561

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