Method of forming patterns in manufacturing microelectronic...

Details Method of forming patterns in manufacturing microelectronic... Method of forming patterns in manufacturing microelectronic...

H - Electricity

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H05K 3/06 (2006.01) C08G 8/28 (2006.01) G03F 7/075 (2006.01) G03F 7/09 (2006.01) H01L 21/311 (2006.01) H01L 21/312 (2006.01) H05K 3/08 (2006.01)

Patent

CA 1207216

ABSTRACT OF THE DISCLOSURE A method of forming fine patterns in the manufacture of microelectronic devices by using optical or electron-beam lithography and a dry etching technique such as reactive sputter etching with oxygen. The substrate surface is covered with a relatively thick organic layer, and a thin resist film is formed thereon. The material of the resist layer is a polymer or copolymer comprising trialkylsilyl group, dimethylphenylsilyl group or trialkoxysilyl group. The thickness of the resist film is so adjusted as to contain a sufficient number of trialkylsilyl, dimethylphenylsilyl or trialkoxysilyl groups per unit area of the resist pattern to thereby ensure high endurance of the resist to dry etching for etching the thick organic layer.

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