Method of forming recessed oxide isolation

Details Method of forming recessed oxide isolation Method of forming recessed oxide isolation

H - Electricity

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356/151

H01L 21/22 (2006.01) H01L 21/033 (2006.01) H01L 21/311 (2006.01) H01L 21/312 (2006.01) H01L 27/146 (2006.01) H01L 29/808 (2006.01)

Patent

CA 1065497

ABSTRACT OF THE DISCLOSURE Disclosed is a method of manufacturing semiconductor devices, which method comprises the processes of: forming at least one recess and at least one projec- ting portion on a surface of a semiconductor substrate; apply- ing coating material on the recess and on the projecting portion in such manner that the layer of the coating material in the recess is thicker than that on the projecting portion; providing a bared portion at the top of the projecting portion by removing an applied coated material on the silicon dioxide layer of the semiconductor substrate at a uniform removing rate; and diffusing impurities to form different conductivity regions through the bared top portion. The advantages achieved by the use of this newly developed method are (1) the elimination of a process for the self alignment of a mask, (2) the production of highly reliable semiconductor devices, and (3) increased productivity of semiconductor devices.

237865

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