Method of forming recessed oxide isolation with reduced...

Details Method of forming recessed oxide isolation with reduced... Method of forming recessed oxide isolation with reduced...

H - Electricity

01

L

356/142

H01L 21/762 (2006.01) H01L 21/308 (2006.01)

Patent

CA 1226681

Abstract Disclosed is a method of forming in a monocrys- talline silicon body an optimum recessed oxide isola- tion structure with reduced steepness of the bird's neck. Starting from a monocrystalline silicon body, there is formed thereon a layered structure of first silicon dioxide, polycrystalline silicon, second silicon dioxide and silicon nitride, in that order. The layers are patterned to form openings in the structure at the areas where it is desired to form the oxide isolation pattern within the silicon body. The exposed areas of the silicon body are anisotropically reactive ion etched to an initial portion of the desired depth obtaining the corresponding portion of the trench having substantially vertical walls. Then by chemical etching the trench is extended to a final portion of the desired depth obtaining inwardly sloped walls in the final portion. The body is then thermal- ly oxidized until the desired oxide isolation pene- trates to the desired depth within the silicon body.

504798

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