Method of forming resist micropattern

Details Method of forming resist micropattern Method of forming resist micropattern

G - Physics

03

F

96/266

G03F 7/26 (2006.01) G03F 7/00 (2006.01) G03F 7/40 (2006.01)

Patent

CA 1264596

- 35 - Abstract of the Disclosure A resist pattern is formed on a substrate by forming a resist on a substrate and radiating an energy beam carrying predetermined pattern information onto the resist, thereby forming a recessed pattern in a surface portion of the resist so as not to extend through the resist. A flat mask layer is formed on the resist including the recessed pattern. The mask layer is uniformly etched along a direction of thickness thereof until at least a surface of the resist is exposed to allow the mask layer to remain on at least a bottom of the recessed pattern, thereby forming a mask pattern comprising the remaining residual mask layer. Finally, the resist is etched by using the mask pattern as an etching mask.

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