Method of forming semiconducting amorphous silicon films...

Details Method of forming semiconducting amorphous silicon films... Method of forming semiconducting amorphous silicon films...

C - Chemistry, Metallurgy

23

C

117/85

C23C 16/24 (2006.01) H01L 21/205 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1335950

The invention relates to the chemical vapor deposition of dihalogenated silanes to form stable, abrasion resistant, photoconductive, dopable semiconductor amorphous films on substrates. Additional hydrogen and plasma discharge conditions are not necessary to practice the invention.

546170

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