Method of forming silicon dioxide glass films

H - Electricity – 01 – L

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356/178, 356/182

H01L 21/205 (2006.01) C23C 16/46 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1333146

The manufacture of semiconductor devices and, specifically, deposition of SiO2 coatings on semiconductor devices by oxidation decomposition of siloxanes is disclosed.

563214

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