C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 1/02 (2006.01) C30B 1/12 (2006.01)
Patent
CA 2335260
The invention is concerned with a method of forming a single crystal of a ceramic, semiconductive or magnetic material. The method according to the invention comprises the steps of (a) compacting a nanocrystalline powder comprising particles having an average particle size of 0.05 to 20 µm and each formed of an agglomerate of grains with each grain comprising a nanocrystal of a ceramic, semiconductive or magnetic material; and (b) sintering the compacted powder obtained in step (a) at a temperature sufficient to cause an exaggerated growth of at least one of the grains, thereby obtaining at least one single crystal of aforesaid material. Instead of sintering the compacted powder, it is also possible to contact same with a template crystal of the aforesaid material, and to heat the compacted powder and template crystal in contact with one another so as to cause a sustained directional growth of the template crystal into the compacted powder, thereby obtaining a single crystal having a size larger than the template crystal. By using nanocrystalline powders, the temperature of operation for crystal growth is reduced, the rate of crystal growth increases, and crystals with large size and with very little or no porosity or inclusions can be obtained.
Alamdari Houshang
Boily Sabin
Tessier Pascal
Groupe Minutia Inc.
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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