Method of forming trench isolated regions with sidewall doping

Details Method of forming trench isolated regions with sidewall doping Method of forming trench isolated regions with sidewall doping

H - Electricity

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H01L 21/302 (2006.01) H01L 21/225 (2006.01) H01L 21/762 (2006.01) H01L 21/8238 (2006.01) H01L 27/092 (2006.01)

Patent

CA 2036778

In a semiconductor substrate, a method of forming a shallow isolation trench having a doped sidewall is disclosed. A shallow trench having nearly vertical walls is formed in the semiconductor substrate. A doped silicon layer is selectively grown on a sidewall and a portion of the bottom of the trench. The dopant from the silicon layer is then driven into the substrate by a suitable method such as annealing. The trench is subsequently filled with a dielectric material.

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