Method of growing an alloy film by a layer-by-layer process...

Details Method of growing an alloy film by a layer-by-layer process... Method of growing an alloy film by a layer-by-layer process...

H - Electricity

01

L

148/1, 356/118

H01L 21/66 (2006.01) C23C 14/54 (2006.01) C30B 23/02 (2006.01)

Patent

CA 1208806

16 ABSTRACT: A method of growing an alloy film by a layer-by-layer process on a substrate, and a method of mixing a semiconductor device in which an alloy film is grown on a substrate by a layer-by-layer process. The atomic ratio of constituents present in the alloy film is determined during growth of the film from the growth rates of the alloy film and of at least one intermediate film consisting of at least one constituent of the alloy, which intermediate film(s) is(are) grown between the alloy film and the substrate. During growth of each film, the growth surface is irradiated with a beam of electrons, and the period of oscillations in the intensity of the stream of electrons diffracted at the growth surface, or specularly reflected by the growth surface, or emitted from the growth surface, or of the current flowing to earth through the substrate. These periods are equal to the respective times taken to grow one monolayer of the respective film.

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