C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.4, 204/91.
C30B 25/02 (2006.01) C30B 29/40 (2006.01) C30B 29/48 (2006.01)
Patent
CA 1278272
Abstract Method of growing crystalline layers by vapour phase epitaxy A method of growing an epitxial crystalline layer on a sub- strate which comprises the steps of (a) providing in the reaction zone of a reaction vessel a heated substrate (b) establishing a gas stream, provided by a carrier gas which comprises at least 50% by volume of an inert gas, which con- tains, in the vapour phase, at least one alkyl of an element selected from Group Vb and Group VIb of the Periodic Table, (c) passing the gas stream through thre action zone into contact with the heated substrate, and (d) irradiating at least a major part of the surface of the substrate with electromagnetic radiation to provide photolytic decomposition of the at least one alkyl and consequential epitaxial deposition of the layer containing the said element across at least a major part of the surface of the substrate.
494754
Giess Jean
Irvine Stuart J.c.
Mullin John B.
Fetherstonhaugh & Co.
Giess Jean
Irvine Stuart J.c.
Mullin John B.
Secretary Of State For Defence In Her Britannic Majesty's Govern
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