Method of growing gallium arsenide crystals using boron...

Details Method of growing gallium arsenide crystals using boron... Method of growing gallium arsenide crystals using boron...

C - Chemistry, Metallurgy

30

B

148/3.8

C30B 29/42 (2006.01) C30B 27/02 (2006.01)

Patent

CA 1214381

ABSTRACT OF THE DISCLOSURE Gallium arsenide single crystals are grown under an encapsulant of boron oxide which contains a predetermined amount of water in the range of 200 to 1000 ppm. The GaAs crystals so produced are stable in that the resistivity of the GaAs upon heat treatment remains substantially constant. The GaAs single crystals as produced may be subjected to a bulk anneal to further improve the stability.

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