Method of growing n-type gaas layers by molecular beam epitaxy

Details Method of growing n-type gaas layers by molecular beam epitaxy Method of growing n-type gaas layers by molecular beam epitaxy

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 23/02 (2006.01) H01L 21/203 (2006.01)

Patent

CA 1150602

PHB 32.634 ABSTRACT: A method of growing an n-type GaAs layer on a substrate by a molecular beam epitaxy process, the dopant consisting of S, Se or Te. The layer is prepared by direc- ting molecular beams of gallium, arsenic and PbX, where X is S, Se or Te, onto a heated substrate. It has not proved practicable to grow an n-type GaAs layer by molecular beam epitaxy using S, Se or Te as dopant in the form of a mole- cular beam consisting of elemental S, Se or Te.

335602

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