Method of growing oxide layer on indium gallium arsenide

Details Method of growing oxide layer on indium gallium arsenide Method of growing oxide layer on indium gallium arsenide

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 25/02 (2006.01) C23C 8/36 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1201365

METHOD OF GROWING OXIDE LAYER ON INDIUM GALLIUM ARSENIDE Abstract A method of growing a water insoluble native plasma oxide on an In0.53Ga0.47As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.

413300

Affiliated with

Also associated with

Rating

Method of growing oxide layer on indium gallium arsenide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of growing oxide layer on indium gallium arsenide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing oxide layer on indium gallium arsenide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1325990