Method of growing silicon ingots using a rotating melt

Details Method of growing silicon ingots using a rotating melt Method of growing silicon ingots using a rotating melt

C - Chemistry, Metallurgy

30

B

148/1.3

C30B 15/30 (2006.01) C30B 11/00 (2006.01) C30B 21/00 (2006.01) C30B 29/06 (2006.01)

Patent

CA 2000243

Abstract of the Disclosure The invention is a method and apparatus for producing silicon ingots of substantially single crystallinity from metallurgical grade silicon by heating it in a crucible to above its melting point to melt it and then extracting heat from the bottom of the crucible with a heat exchanger in heat conducting relationship with the bottom, and by moving the crucible and growing crystal in a first direction and accelerating the motion, thereby detaching from the crystal/liquid interface adhered impurity particles. The crucible may be rotated and the acceleration may be rotational.

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