Method of growing single crystals

C - Chemistry – Metallurgy – 30 – B

Patent

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148/3.6

C30B 29/14 (2006.01) C30B 7/00 (2006.01)

Patent

CA 1149269

Abstract of the Disclosure Single crystals of alpha aluminum phosphate of high crystal perfec- tion are grown from seeded solutions of aluminum orthophosphate and orthophos- phoric acid in such a manner as to provide direct visual observation of the crystal growth process and allow precise determination of nucleation and growth kinetics. The method involves sealing the seeded solution in clear quartz ampules, inserting the ampules into a precisely temperature controlled silicone oil bath, increasing the temperature of the silicone oil bath from ambient temperature to approximately 150 degrees C over a three hour period, program- ming the temperature of the bath upward at the rate of 0.1 to 2.0 degrees C per day for periods up to sixty days, and removing the quartz ampules from the silicone oil bath and quickly cooling and removing the crystals.

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