Method of improving silicon-on-insulator uniformity

Details Method of improving silicon-on-insulator uniformity Method of improving silicon-on-insulator uniformity

H - Electricity

01

L

356/136

H01L 21/08 (2006.01) B24B 1/00 (2006.01) H01L 21/302 (2006.01) H01L 21/304 (2006.01) H01L 21/306 (2006.01) H01L 21/3105 (2006.01) H01L 21/762 (2006.01) H01L 21/764 (2006.01)

Patent

CA 1247259

ABSTRACT OF THE DISCLOSURE A method of improving silicon-on-insulator unifor- mity using polishing. A polishing stop layer of substantially uniform thickness is provided having a first side which is made coplanar with a first side of a thicker layer of semiconductor material. A polishing process is applied to a second side of the semiconductor material until a second side of the polishing stop layer is encountered, such that the substantially uniform thickness of the polishing stop layer can be used to define the semiconductor material to a layer of uniform thickness.

556671

Affiliated with

Also associated with

Rating

Method of improving silicon-on-insulator uniformity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of improving silicon-on-insulator uniformity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of improving silicon-on-insulator uniformity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1260970